november 1995 - revised july 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp61089 gated protector series tisp61089d, tisp61089sd, tisp61089ad, tisp61089asd dual forward-conducting p-gate thyristors programmable overvoltage protectors how to order overvoltage protection for negative rail slics dual voltage-tracking protectors - 61089 for battery voltages to.......................................... -75 v - 61089a for battery voltages to ..................................... -100 v - low gate triggering current ....................................... < 5 ma - high holding current ............................................... > 150 ma rated for gr-1089-core and k.44 impulses impulse wave shape i ppsm a volt a ge c urre nt 2/10 2/10 120 10/700 5/310 40 10/1000 10/1000 30 2/10 overshoot voltage specified element i pp = 100 a, 2/ 10 v diode 8 scr 12 package options - surface mount 8-pin small-outline line feed-thru connection (d) shunt version connection (sd) ..................................................... ul recognized components d package top view and device symbol for feed-thru pin-out sd6xaeb g k1 k2 k1 k2 a a d package top view and device symbol for shunt (sd) pin-out md6xbe nc - no interna l connection terminal typical application names shown in parenthesis 1 2 3 45 6 7 8nc a a nc g k1 k2 nc (ground) (ground) (gate) (tip) (ring) sd6xau g k1 k2 a a *rohs directive 2002/95/ec jan 27 2003 including annex * r o h s c o m p l ia n t md6xbda nc - no internal connection terminal typical application names shown in parenthesis 1 2 3 45 6 7 8k1 a a k2 g k1 k2 nc (ground) (ground) (gate) (tip) (ring) (tip) (ring) device package carrier device package carrier tisp61089 d (small-outline) r? tisp61089a d (small-outline) r? tisp61089s d (small-outline) r? tisp61089as d (small-outline) r? tisp61089dr-s tisp61089sdr-s TISP61089ADR-S tisp61089asdr-s ? carrier r is embossed tape reeled ? carrier r is embossed tape reeled order as order as
november 1995 - revised july 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp61089 gated protector series absolute maximum ratings, -40 c t j 85 c (unless otherwise noted) description these 61089 parts are all dual forward-conducting buffered p-gate thyristor (scr) overvoltage protectors. they are designed to protect monolithic slics (subscriber line interface circuits) against overvoltages on the telephone line caused by lightning, a.c. powe r contact and induction. the 61089 limits voltages that exceed the slic supply rail voltage. the 61089 parameters are specified to allow eq uipment compliance with telcordia (formally bellcore) gr-1089-core and itu-t recommendations k.20, k.21 and k.45. the slic line driver section is typically powered from 0 v (ground) and a negative (battery) voltage. the protector gate is con nected to this negative supply. this references the protection (clipping) voltage to the negative supply voltage. the protection voltage will then track the negative supply voltage and the overvoltage stress on the slic is minimized. positive overvoltages are clipped to ground by diode forward conduction. negative overvoltages are initially clipped close to t he slic negative supply rail value. if sufficient current is available from the overvoltage, then the protector scr will switch into a low voltage on-state condition. as the overvoltage subsides the high holding current of 61089 scr helps prevent d.c. latchup. the 61089 is intended to be used with a series resistance of at least 25 ? and a suitable overcurrent function for telcordia compliance. power fault conditions require a series overcurrent element which either interrupts or reduces the circuit current before the 61089 current rating is exceeded. for equipment compliant to itu-t recommendations k.20 or k.21 or k.45 only, the series resistor value is set by the c oordination requirements. for coordination with a 400 v limit gdt, a minimum series resistor value of 10 ? is recommended. the 61089 buffered gate design reduces the loading on the slic supply during overvoltages caused by power cross and induction. the regular pin-out for surface mount and through-hole packages is a feed through configuration. connection to the slic is made via the 61089, ring through pins 4 - 5 and tip through pins 1 - 8. a non-feed-through surface mount (d) package is available. this shunt (sd) version pin-out does not make duplicate connections to pin 5 and pin 8 which increases package creepage distance from ground of the other conne ctions from about 0.7 mm to over 3 mm. high voltage ringing slics, with battery voltages below -100 v and down to -155 v, can be prote cted by the tisp61089b device. details of this device are in the tisp61089b data sheet. rating symbol value unit repetitive peak off-state voltage, v gk =0 61089 61089a v drm -100 -120 v repetitive peak gate-cathode voltage, v ka =0 61089 61089a v gkrm -85 -120 v non-repetitive peak on-state pulse current (see notes 1 and 2) i ppsm a 10/1000 s (telcordia (bellcore) gr-1089-core, issue 2, february 1999, section 4) 5/320 s (itu-t k.20, k.21& k.45, k.44 open-circuit voltage wave shape 10/700 s) 1.2/50 s (telcordia (bellcore) gr-1089-core, issue 2, february 1999, section 4) 2/10 s (telcordia (bellcore) gr-1089-core, issue 2, february 1999, section 4) 30 40 100 120 non-repetitive peak on-state current, v gg = -75 v, 50 hz to 60 hz (see notes 1 and 2) i tsm a 0.1 s 11 1 s 5 s 300 s 900 s 4.8 2.7 0.95 0.93 non-repetitive peak gate current, 1/2 s pulse, cathodes commoned (see notes 1 and 2) i gsm +40 a operating free-air temperature range t a -40 to +85 c junction temperature t j -40 to +150 c storage temperature range t stg -40 to +150 c notes: 1. initially the protector must be in thermal equilibrium with -40 c t j 85 c. the surge may be repeated after the device returns to its initial conditions. gate voltage ranges are -20 v to -75 v for the 61089 and -20 v to -100 v for the 61089a. 2. the rated current values may be applied either to the ring to ground or to the tip to ground terminal pairs. additionally, bo th terminal pairs may have their rated current values applied simultaneously (in this case the ground terminal current will be twi ce the rated current value of an individual terminal pair). above 85 c, derate linearly to zero at 150 c lead temperature.
november 1995 - revised july 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp61089 gated protector series recommended operating conditions component min typ max unit c g gate decoupling capacitor 100 220 nf r s series resistor for gr-1089-core first-level surge survival 25 ? series resistor for gr-1089-core first-level and second-level surge survival 40 ? series resistor for gr-1089-core intra-building port surge survival 8 ? series resistor for k.20, k.21 and k.45 coordination with a 400 v primary protector 10 ? electrical characteristics, t j = 25 c (unless otherwise noted) parameter test conditions min typ max unit i d off-state current v d =v drm , v gk =0 t j = 25 c-5 a t j = 85 c-50 a v (bo) breakover voltage 2/10 s, i pp = -56 a, r s = 45 ? , v gg = -48 v, c g = 220 nf 2/10 s, i pp = -100 a, r s = 50 ? , v gg = -48 v, c g = 220 nf 1.2/50 s, i pp = -53 a, r s = 47 ? , v gg = -48 v, c g = 220 nf 1.2/50 s, i pp = -96 a, r s = 52 ? , v gg = -48 v, c g = 220 nf -57 -60 -60 -64 v v gk(bo) gate-cathode impulse breakover voltage 2/10 s, i pp = -56 a, r s = 45 ? , v gg = -48 v, c g = 220 nf 2/10 s, i pp = -100 a, r s = 50 ? , v gg = -48 v, c g = 220 nf 1.2/50 s, i pp = -53 a, r s = 47 ? , v gg = -48 v, c g = 220 nf 1.2/50 s, i pp = -96 a, r s = 52 ? , v gg = -48 v, c g = 220 nf 9 12 12 16 v v f forward voltage i f =5a, t w =200 s3v v frm peak forward recovery voltage 2/10 s, i pp = 56 a, r s = 45 ? , v gg = -48 v, c g = 220 nf 2/10 s, i pp = 100 a, r s = 50 ? , v gg = -48 v, c g = 220 nf 1.2/50 s, i pp = 53 a, r s = 47 ? , v gg = -48 v, c g = 220 nf 1.2/50 s, i pp = 96 a, r s = 52 ? , v gg = -48 v, c g = 220 nf 6 8 8 12 v i h holding current i t = -1 a, di/dt = 1a/ms, v gg =-48v -150 ma i gks gate reverse current v gg =v gk =v gkrm , v ka =0 t j = 25 c-5 a t j = 85 c-50 a i gt gate trigger current i t =-3a, t p(g) 20 s, v gg =-48v 5 ma v gt gate-cathode trigger voltage i t =-3a, t p(g) 20 s, v gg = -48 v 2.5 v q gs gate switching charge 1.2/50 s, i pp = -53 a, r s = 47 ? , v gg = -48 v, c g = 220 nf 0.1 c c ka cathode-anode off- state capacitance f=1mhz, v d =1v, i g = 0, (see note 3) v d = -3 v 100 pf v d =-48v 50 pf notes: 3. these capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. the unmeasured device terminals are a.c. connected to the guard terminal of the bridge. thermal characteristics parameter test conditions min typ max unit r ja junction to free air thermal resistance t a = 25 c, eia/jesd51-3 pcb, eia/jesd51-2 environment, p tot = 1.7 w d package 120 c/w
november 1995 - revised july 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. parameter measurement information tisp61089 gated protector series figure 1. voltage-current characteristic unless otherwise noted, all voltages are referenced to the anode -v v gg i h i t i tsm i ppsm v (bo) i d quadrant i forward conduction characteristic +v +i i f v f i fs m (= |i ts m |) i ppsm -i quadrant iii switching characteristic pm6xaac v gk(bo )
november 1995 - revised july 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. figure 2. non-repetitive peak on-state current against duration (gate voltage ranges are -20 v to -75 v for the '61089 and -20 v to -100 v for the '61089a) peak non-recurring ac vs current duration t current duration s 0.01 0.1 1 10 100 1000 i tsm peak non-recurrent 50 hz current a 0.5 0.6 0.7 0.8 1.5 2 3 4 5 6 7 8 15 20 1 10 eia /jesd51 environment and pcb, t a = 25 c ti61afa v gg = -100 v v gg = -60 v v gg = -80 v ring and t ip term inals: equal i tsm values applied simultaneously ground term inal: current twice i tsm value thermal information tisp61089 gated protector series
november 1995 - revised july 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. applications information tisp61089 gated protector series gated protectors this section covers three topics. first, it is explained why gated protectors are needed. second, the voltage limiting action o f the protector is described. third, an example application circuit is described. purpose of gated protectors fixed voltage thyristor overvoltage protectors have been used since the early 1980s to protect monolithic slics (subscriber lin e interface circuits) against overvoltages on the telephone line caused by lightning, a.c. power contact and induction. as the slic was usu ally powered from a fixed voltage negative supply rail, the limiting voltage of the protector could also be a fixed value. the tisp1072f3 is a typical example of a fixed voltage slic protector. slics have become more sophisticated. to minimize power consumption, some designs automatically adjust the supply voltage, v bat , to a value that is just sufficient to drive the required line current. for short lines the supply voltage would be set low, but for long lines, a higher supply voltage would be generated to drive sufficient line current. the optimum protection for this type of slic would be given by a protection voltage which tracks the slic supply voltage. this can be achieved by connecting the protection thyristor gate to the slic supp ly, figure 3. this gated (programmable) protection arrangement minimizes the voltage stress on the slic, no matter what value of supply volta ge. figure 3. 61089 buffered gate protector rsa ri ng wire tip wire slic '61089 v bat c1 220 nf ai6xagb ac generator 0 - 600 v rms switching m ode power supply generator source resistance i bat i g i slic c2 d1 tx th4 th5 40 600 600 rsb 40 operation of gated protectors figures 4 and 5 show how the 61089 device limits negative and positive overvoltages. positive overvoltages (figure 5) are clip ped by the antiparallel diodes in the 61089 protector and the resulting current is diverted to ground. negative overvoltages (figure 4) a re initially clipped close to the slic negative supply rail value (v bat ). if sufficient current is available from the overvoltage, then the protector (th5) will crowbar into a low voltage on-state condition. as the overvoltage subsides the high holding current of the crowbar prevents d.c. latchu p. the protection voltage will be the sum of the gate supply (v bat ) and the peak gate-cathode voltage (v gk(bo) ). the protection voltage will be increased if there is a long connection between the gate decoupling capacitor, c1, and the gate terminal. during the initial ri se of a fast impulse, the gate current (i g ) is the same as the cathode current (i k ). rates of 70 a/ s can cause inductive voltages of 0.7 v in 2.5 cm of printed wiring track. to minimize this inductive voltage increase of protection voltage, the length of the capacitor to gate te rminal tracking should be minimized. inductive voltages in the protector cathode wiring will also increase the protection voltage. these voltag es can be minimized by routing the slic connection through the protector as shown in figure 3. application circuit figure 6 shows a typical 61089 part slic card protection circuit. the incoming line conductors, ring (r) and tip (t), connect to the relay matrix via the series overcurrent protection. fusible resistors, fuses and positive temperature coefficient (ptc) thermistors c an be used for overcurrent protection. resistors will reduce the prospective current from the surge generator for both the 61089 device and t he ring/test
november 1995 - revised july 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. applications information tisp61089 gated protector series application circuit (continued) protector. the tisp7xxxf3 protector has the same protection voltage for any terminal pair. this protector is used when the ring generator configuration may be ground or battery-backed. for dedicated ground-backed ringing generators, the tisp3xxxf3 gives better prot ection as its inter-conductor protection voltage is twice the conductor to ground value. relay contacts 3a and 3b connect the line conductors to the slic via the 61089 protector. the protector gate reference voltage comes from the slic negative supply (v bat ). a 220 nf gate capacitor sources the high gate current pulses caused by fast rising impulses. figure 4. negative overvoltage condition c1 220 nf i g th 5 slic v bat slic protec tor '61089 i k ai6xahc figure 5. positive overvoltage condition th5 slic v bat slic protec tor '61089 c1 220 nf i f ai6x aic figure 6. typical application circuit test relay ri ng relay sl ic relay test equip- ment ring generator s1a s1b rsa rsb ring wi re tip wire th1 th2 th3 th4 th5 sl ic sl ic protec tor ri ng/test protec tion over- current protec tion s2a s2b '61089 tisp 3xxxf3 or 7xxxf3 s3a s3b v bat c1 220 nf ai6xajc
november 1995 - revised july 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. device symbolization code tisp61089 gated protector series mechanical data devices will be coded as below. device symbolization code tisp61089dr-s p61089 tisp61089sdr-s 61089s TISP61089ADR-S 61089a tisp61089asdr-s 1089as tisp is a trademark of bourns, ltd., a bourns company, and is registered in u.s. patent and trademark office. bourns is a registered trademark of bourns, inc. in the u.s. and other countries.
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